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MITSUBISHI IGBT MODULES
CM200DU-24NFH
HIGH POWER SWITCHING USE
CM200DU-24NFH
IC ................................................................... 200A VCES ......................................................... 1200V Insulated Type 2-elements in a pack
APPLICATION High frequency switching use (30kHz to 60kHz). Gradient amplifier, Induction heating, power supply, etc.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
108 (7.5) 14 93 0.25 14
TC measured point (7.5) 14
E2 G2
C2E1 E2 G2
E2
C1
6
48 0.25
(8.25)
CM
G1 E1
17.5 6
(18)
CIRCUIT DIAGRAM
8.85
C2E1
E2
C1
25 3-M6 NUTS 4-6. 5 MOUNTING HOLES
25
21.5
2.5 25.7 4 0.5 2.8 7.5 8.5 0.5 0.5 0.5
18
7
18
7
18
+1.0 -0.5
29
22
LABEL
(7)
Feb. 2009
4
G1 E1
15
62
MITSUBISHI IGBT MODULES
CM200DU-24NFH
HIGH POWER SWITCHING USE
MAXIMUM RATINGS
Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) PC' (Note 3) Tj Tstg Viso -- -- --
(Tj = 25C, unless otherwise specified)
Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight G-E Short C-E Short Operation Pulse Operation Pulse TC = 25C TC' = 25C*4
Conditions
(Note 2) (Note 2) (Note 2) (Note 2)
Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value
Ratings 1200 20 200 400 200 400 830 1300 -40 ~ +150 -40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400
Unit V V A A A A W W C C Vrms N*m N*m g
ELECTRICAL CHARACTERISTICS
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q Rth(j-c')R RG Parameter Collector cutoff current
(Tj = 25C, unless otherwise specified)
Test conditions VCE = VCES, VGE = 0V IC = 20mA, VCE = 10V VGE = VGES, VCE = 0V IC = 200A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 200A, VGE = 15V VCC = 600V, IC = 200A VGE = 15V RG = 1.6, Inductive load IE = 200A IE = 200A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound Applied*2 (1/2 module) IGBT part (1/2 module) FWDi part (1/2 module) Tj = 25C Tj = 125C
Min. -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 1.6
Limits Typ. -- 6 -- 5.0 5.0 -- -- -- 900 -- -- -- -- -- 7.5 -- -- -- 0.04 -- -- --
Max. 1 7.5 0.7 6.5 -- 32 2.7 0.6 -- 300 80 500 150 250 -- 3.5 0.15 0.24 -- 0.095*3 0.14*3 16
Unit mA V A V nF nF nF nC ns ns ns ns ns C V K/W K/W K/W K/W K/W
Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance*4 External gate resistance
*1 : Case temperature (TC) measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of = 0.9[W/(m * K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. *4 : Case temperature (TC') measured point is just under the chips.
Note 1. IE, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. No short circuit capability is designed.
Feb. 2009 2
MITSUBISHI IGBT MODULES
CM200DU-24NFH
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) 400
COLLECTOR CURRENT IC (A)
TRANSFER CHARACTERISTICS (TYPICAL) 400
COLLECTOR CURRENT IC (A)
Tj = 25C
350 300 250 200 150 100 50 0 0 2 4
VGE=20 (V)
14 13 15 12
VCE = 10V 350 300 250 200 150 100 50 0 0 5 10 Tj = 25C Tj = 125C 15 20
11
10 9 8 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 Tj = 25C IC = 400A
9 VGE = 15V 8 Tj = 25C Tj = 125C 7 6 5 4 3 2 1 0 0 50 100 150 200 250 300 350 400 COLLECTOR CURRENT IC (A)
8
6 IC = 200A 4 IC = 80A
2
0
6
8
10
12
14
16
18
20
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103
EMITTER CURRENT IE (A)
7 5 3 2
CAPACITANCE CHARACTERISTICS (TYPICAL) 102
CAPACITANCE Cies, Coes, Cres (nF)
7 5 3 2
Tj = 125C Tj = 25C
Cies
101
7 5 3 2
102
7 5 3 2
Coes
100
7 5 3 2
Cres
101
0
1
2
3
4
5
VGE = 0V 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V)
Feb. 2009
EMITTER-COLLECTOR VOLTAGE VEC (V)
3
MITSUBISHI IGBT MODULES
CM200DU-24NFH
HIGH POWER SWITCHING USE
HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 103
7 5
SWITCHING TIME (ns)
3 2
5 3 2
5 3
102
7 5 3 2
td(off) td(on) tr tf Conditions: VCC = 600V VGE = 15V RG = 1.6 Tj = 125C Inductive load 23 5 7 103
Irr
2
102
7 5 3 2
101
7 5 3 2
100 1 10
2
3
5 7 102
101 1 10
2
3
5 7 102
102 trr 7 Conditions: 5 VCC = 600V VGE = 15V 3 RG = 1.6 2 Tj = 25C Inductive load 101 23 5 7 103
COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 100
EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 100
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c)
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c)
7 5 3 2
Single Pulse TC = 25C 10-1
7 5 3 2
7 5 3 2
Single Pulse TC = 25C 10-1
7 5 3 2
10-1
7 5 3 2
10-1
7 5 3 2
10-2
7 5 3 Per unit base = 2
10-2
7 5 3 2
10-2
7 5 3 Per unit base = 2
10-2
7 5 3 2
Rth(j-c) = 0.15K/W
10-3
10-5 2 3 5 710-4 2 3 5 7 10-3 TIME (s)
10-3
Rth(j-c) = 0.24K/W
10-3
10-3 10-5 2 3 5 710-4 2 3 5 7 10-3
TIME (s)
GATE CHARGE CHARACTERISTICS (TYPICAL) 20
GATE-EMITTER VOLTAGE VGE (V)
IC = 200A
VCC = 400V VCC = 600V
15
10
5
0
0
200 400 600 800 1000 1200 1400 GATE CHARGE QG (nC)
Feb. 2009 4
REVERSE RECOVERY CURRENT Irr (A)
REVERSE RECOVERY TIME trr (ns)
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 103 Tj = 25C 7 7

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